parameter ol value unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9.0 v collector current i c 4.0 a base current i b 2.0 a total dissipation at p tot 70 w max. operating junction temperature t j 150 o c storage temperature t stg -65~150 o c BUL128D parameter symbol test conditions min. typ. max. unit collector cut-off current i ces v ce =700v, i e =0 0.25 ma emitter cut-off current i ebo v eb =9v, i c =0 0.1 ma collector-emitter sustaining voltage v ceo i c =100ma, i b =0 400 v emitter-base breakdownvoltage (i c =0) bv ebo i e =10ma 9 18 v dc current gain h fe(1) v ce =5v, i c =2.0a 12 32 h fe(2) v ce =5v, i c =10ma 10 collector-emitter saturation voltage v ce(sat) i c =1.0a,i b =0.2a 1.0 v i c =4.0a, i b =1.0a 0.5 base-emitter saturation voltage v be(sat) i c =1.0a,i b =0.2a 1.2 v i c =2.5a,i b =0.5a 1.3 storage time t s i c =2.0a i b1 =-i b2 =0.4a 2.0 2.9 us high voltage fast-switchingnpn power transistor product specification absolute maximum ratings to-220ab npn transistor high voltage capability low spread of dynamic parameters minimum lot-to-lot spread for reliable operation very high switching speed (tcase = 25 unless otherwise specified) description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the device is designed for use in lighting applications electronic ballasts for fluorescent lighting flyback and forward single tiger electronic co.,ltd
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